april 2009 FDP22N50N n-channel mosfet ?2009 fairchild semiconductor corporation FDP22N50N rev. a www.fairchildsemi.com 1 unifet tm FDP22N50N n-channel mosfet 500v, 22a, 0.22 ? features ?r ds(on) = 0.185 ? ( typ.)@ v gs = 10v, i d = 11a ? low gate charge ( typ. 49nc) ? low c rss ( typ. 24pf) ? fast switching ? 100% avalanche tested ? improve dv/dt capability ? rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to mini- mize on-state resistance, prov ide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switching mode power s upplies and active power factor correction. d g s to-220 fdp series g s d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter FDP22N50N units v dss drain to source voltage 500 v v gss gate to source voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 22 a -continuous (t c = 100 o c) 13.2 i dm d r a i n c u r r e n t - p u l s e d (note 1) 88 a e as single pulsed avalanche energy (note 2) 1000 mj i ar avalanche current (note 1) 22 a e ar repetitive avalanche energy (note 1) 31.25 mj dv/dt peak diode recovery dv/dt (note 3) 10 v/ns p d power dissipation (t c = 25 o c) 312.5 w - derate above 25 o c2.5w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FDP22N50N units r jc thermal resistance, junction to case 0.4 o c/w r cs thermal resistance, case to sink typ. 0.5 r ja thermal resistance, junction to ambient 62.5 *drain current limited by maximum junction temperature
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDP22N50N FDP22N50N to-220 - - 50 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, 500 - - v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.45 - v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 1 a v ds = 400v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 11a - 0.185 0.22 ? g fs forward transconductance v ds = 20v, i d = 11a - 24.4 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 2456 3200 pf c oss output capacitance - 351 460 pf c rss reverse transfer capacitance - 24 50 pf q g(tot) total gate charge at 10v v ds = 400v, i d = 22a v gs = 10v (note 4) -4965nc q gs gate to source gate charge - 15 - nc q gd gate to drain ?miller? charge - 19 - nc t d(on) turn-on delay time v dd = 250v, i d = 22a r g = 4.7 ? (note 4) -2255ns t r turn-on rise time - 50 110 ns t d(off) turn-off delay time - 48 110 ns t f turn-off fall time - 35 80 ns i s maximum continuous drain to source diode forward current - - 22 a i sm maximum pulsed drain to source diode forward current - - 88 a v sd drain to source diode forward voltage v gs = 0v, i sd = 22a - - 1.4 v t rr reverse recovery time v gs = 0v, i sd = 22a di f /dt = 100a/ s - 472 - ns q rr reverse recovery charge - 6.5 - c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 4.1mh, i as = 22a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 22a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 0.05 50 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0v 10.0v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d ,drain current[a] v ds ,drain-source voltage[v] 0.2 345678 0.1 1 10 100 *notes: 1. v ds = 20v 2. 250 s pulse test -55 o c 150 o c 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] 0 1020304050 0.15 0.20 0.25 0.30 *note: t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0.2 0.6 1.0 1.4 1 10 100 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 0 1000 2000 3000 4000 5000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 30 0 1020304050 0 2 4 6 8 10 *note: i d = 22a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. vs. temperature temperature figure 9. maximum safe operating area figure 10. maximum drain current - FDP22N50N vs. case temperature figure 10. transient thermal response curve - FDP22N50N -75 -25 25 75 125 175 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -75 -25 25 75 125 175 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10v 2. i d = 11a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 110100 0.01 0.1 1 10 100 800 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 200 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 11010 2 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] 0.003 t 1 p dm t 2
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- d = g ate pulse w idth gate pulse period --------------------------
FDP22N50N n-channel mosfet FDP22N50N rev. a www.fairchildsemi.com 7 mechanical dimensions 4.50 0.2 0 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.1 0 ?.0 5 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220
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